Chuangfei Xinyuan is deeply researching the driving Mosfet technology of GaN FET and launching D-Mode GaN products suitable for high-power applications.

In the 75W+charger application, compared to the classic ultra junction high-voltage Mosfet, GaN has advantages such as high efficiency, high frequency, and small volume; In the application of 1KW~10KW digital power supply, compared to SiC Mosfet, GaN has advantages such as simple driving, higher energy efficiency, and better cost-effectiveness.