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Chuangfei Xinyuan adopts the world's leading 12 "wafer process and is committed to promoting a full range of high-performance and highly cost-effective Mosfet products.
The company's core patent application: Deep Trench Double Gate deep groove double gate technology, launching a more high-performance and cost-effective medium and low voltage Mosfet, providing customers with better selection references.

The product series includes:
CSP Mosfet,
Planar planar type
Trench groove type
SGT shielding grid type
Multi EPI SJ multilayer epitaxial superjunction type

Part Number
Configuration
BV (V)
Id@25℃ (A)
Rds@10V Typ(mΩ)
Rds@4.5V Typ(mΩ)
Vgs(th) Max(V)
Qg (nC)
Ciss (pf)
ESD
Package
工业级 车规级