Expand Column
| Temperature rise test | Measure the temperature rise data of DUT under different currents | Benchmark with competitors |
| Short circuit test | Measure the ability of the DUT to withstand short-circuit current at different voltages (such as 4.2V, 6V7V) after turning it on. The higher the value, the better. Compare it with competitors for benchmark | Short circuit time set to 260uS |
| BVtouch testing | Simulate battery reverse connection test, the BVtouch voltage should be greater than the withstand voltage value, and the higher the value, the better | Benchmark with competitors |
| UIS testing | Test whether the DUT can safely turn off its ability under high currents. The higher the current that can be turned off, the more reliable it is | The tested inductance is nH level small inductance |
| SOA testing | Test the ability of DUT to withstand high power in the saturation zone, simulate the reliability of MOS withstanding V * l=power simultaneously during opening and closing periods. Under this working condition, the MOS tube operates in the amplification zone for a time of ms level | Set the Vds voltage to a certain value (such as 5V) and gradually increase the Iss current until it fails. The larger the value, the higher the reliability |
